Infrared Photodetectors: Extrinsic Photoconduction Induced Short‐Wavelength Infrared Photodetectors Based on Ge‐Based Chalcogenides (Small 4/2021)
نویسندگان
چکیده
The cover shows the extrinsic photoconduction induced Ge-based polarization-sensitive photodetector. structure of photodetector is shown in upper left corner. amplified crystal GeSe with several Ge vacancies middle. Additionally, image excess carriers being excited by a polarized light lower right In article number 2006765, Qing Li, Zhongming Wei, Weida Hu, and co-workers investigate effect 2D materials for first time provide strategy to broaden detection waveband photodetectors.
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ژورنال
عنوان ژورنال: Small
سال: 2021
ISSN: ['1613-6829', '1613-6810']
DOI: https://doi.org/10.1002/smll.202170013